Technology Description

Computer data storage can be classified into volatile and non-volatile storage. Volatile memories like dynamic random access memories (DRAMs) are short-term memories with a high writing speed, but they require an external power source for data storage – whereas non-volatile flash memories do not need an external power source and are able to store data for years, but they write information about 1000 times slower than Drams. Our novel semiconductor nanostructure based memory cell combines the advantages of the non-volatility of flash memories with the performance and the endurance of a DRAM. The memory comprises a strained double heterostructure, has an inner semiconductor layer comprising quantum dots and is sandwiched by two outer semiconductor layers. The memory cell uses holes as charge carriers.

Potential Benefits

Hole storage
Fast write/erase speed
High switching speed
Date storage for many years
Use of semiconductor – nanostructures (quantum dots, -wires or -wells)
Modulation-doped field effect transistor (MODFET) type


Not known

Suggested Applications

The presented memory cell is suitable for opto-electronic devices and for data storage. (Computer industry, optoelectronics, consumer electronics)

Case manager

Ina Krueger

JP Application
Dieter, Bimberg,; et al.

Technische Universität Berlin

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Technologies developed at the Technical University Berlin / Germany are already being used in products worldwide. Cooperations with the TU Berlin are possible at every stage, from the beginning of the research to the near-term development to the licensing of the patented technology. Website:

Technology Readiness Level 3

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