Technology Description

Non-volatile Flash memories can store data for years without refreshing them, but they write information about 1000 times slower than volatile dynamic random access memories (DRAMs).The invention presented here is a semiconductor heterostructure (quantum dot) based memory cell, in which the writing process is based on the storage of either holes or electrons, and in which the erasing process is based on the recombination of electrons and holes. Since in these kinds of memory cells the way of storing can be switched between electron storage and hole storage, they can be used as binary storage elements.

Potential Benefits

Long-term data storage
High read/write speed
Low write/erase voltage
Switchable between hole and electron storage


Not known

Suggested Applications

The presented memory cell is suitable for optoelectronic devices and for data storage.
(Computer Industry, optoelectronics, consumer electronics)

Case manager

Ina Krueger

US Patent
Dieter, Bimberg,; et al.

Technische Universität Berlin

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Technologies developed at the Technical University Berlin / Germany are already being used in products worldwide. Cooperations with the TU Berlin are possible at every stage, from the beginning of the research to the near-term development to the licensing of the patented technology. Website:

Technology Readiness Level 2

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